inchange semiconductor isc product specification isc silicon pnp darlington power transistors bdt62/a/b/c description dc current gain -h fe = 1000(min)@ i c = - 3a collector-emitter sustaining voltage- : v ceo(sus) = -60v(min)- bdt62; -80v(min)- BDT62A; -100v(min)- bdt62b; -120v(min)- bdt62c complement to type bdt63/a/b/c applications designed for use in audio amplifier output stages , general purpose amplifier and high s peed switching applications absolute maximum rating s (t a =25 ) symbol parameter value unit bdt62 -60 BDT62A -80 bdt62b -100 v cbo collector-base voltage bdt62c -120 v bdt62 -60 BDT62A -80 bdt62b -100 v ceo collector-emitter voltage bdt62c -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -15 a i b b base current -0.25 a p c collector power dissipation t c =25 90 w t j junction temperature 150 t stg storage ttemperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.39 /w r th j-c thermal resistance,junction to ambient 70 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistors bdt62/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdt62 -60 BDT62A -80 bdt62b -100 v (br)ceo collector-emitter breakdown voltage bdt62c i c = -30ma; i b = 0 -120 v v ce (sat)-1 collector-emitter saturation voltage i c = -3a; i b = -12ma b -2.0 v v ce (sat)-2 collector-emitter saturation voltage i c = -8a; i b = -80ma b -2.5 v v be (on) base-emitter on voltage i c = -3a; v ce = -3v -2.5 v bdt62 v cb = -60v; i e = 0 v cb = -30v; i e = 0; t j =150 -0.2 -2.0 BDT62A v cb = -80v; i e = 0 v cb = -40v; i e = 0; t j =150 -0.2 -2.0 bdt62b v cb = -100v; i e = 0 v cb = -50v; i e = 0; t j =150 -0.2 -2.0 i cbo collector cutoff current bdt62c v cb = -120v; i e = 0 v cb = -60v; i e = 0; t j =150 -0.2 -2.0 ma bdt62 v ce = -30v; i b = 0 b -0.5 BDT62A v ce = -40v; i b = 0 b -0.5 bdt62b v ce = -50v; i b = 0 b -0.5 i ceo collector cutoff current bdt62c v ce = -60v; i b = 0 b -0.5 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -5 ma h fe-1 dc current gain i c = -3a; v ce = -3v 1000 h fe-2 dc current gain i c = -10a; v ce = -3v 200 v ecf c-e diode forward voltage i e = -3a -2.0 v switching times t on turn-on time 0.5 s t off turn-off time i c = -3a; i b1 = -i b2 = -12ma 2.5 s isc website www.iscsemi.cn
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